T-RAM
From Wikipedia, the free encyclopedia
| Computer memory types |
| Volatile |
| Non-volatile |
T-RAM, short for "Thyristor RAM" or "thyristor random-access memory", is a new type of DRAM computer memory invented and developed by T-RAM Semiconductor, which departs from the usual designs of memory cells, combining the strengths of the DRAM and SRAM: high speed and high volume. This technology, which exploits the electrical property known as negative differential resistance and is called Thin-Capacitively-Coupled-Thyristor[1], is used to create memory cells capable of very high packing densities. Due to this, this memory is highly scalable, and already has a storage density that is several times higher than found in conventional six-transistor SRAM memory. It is expected the next generation of T-RAM memory to have the same density as DRAM.
It is assumed that this type of memory will be used in the next-generation processors by AMD, produced in 32nm and 22nm [2], replacing the previously licensed but unused Z-RAM technology.
[edit] References
- ^ http://www.t-ram.com/technology/index.html Description of the technology
- ^ http://www.businesswire.com/portal/site/home/permalink/?ndmViewId=news_view&newsId=20090518005181 Business Wire: GlobalFoundries may use T-RAM in AMD next generation processors
[edit] External links
- T-RAM Semiconductor
- T-RAM Description
- EE Times: GlobalFoundries to apply thyristor-RAM at 32-nm node
- Semiconductor International: GlobalFoundries Outlines 22 nm Roadmap
 |
This computer storage-related article is a stub. You can help Wikipedia by expanding it. |
